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the information provided herein is believed to be reliable at press time. sirenza microdevices assumes no responsibility for in accuracies or ommisions. sirenza microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at t he user?s own risk. prices and specifications are subject to change without notice. no patent rights or licenses to any of the circuits described herein are implied or granted to any third party. sirenza microde vices does not authorize or warrant any sirenza microdevices product for use in life-support devices and/or systems. copyright 2001 sirenza microdevices, inc. all worldwide rights reserved. 303 south technology court broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 1 eds-104229 rev b the sirenza microdevices stq- 2016-3 is a direct quadrature modulator targeted for use in w-cdma applications. this device features a 700-2500 mhz operating frequency band, excellent carrier and sideband suppression, and a low broad- band noise floor. the stq-2016-3 uses silic on germanium (sige) device technology and deliver s a typical channel power of -11 dbm with adjacent channel power le ss than -65 dbc. a digital input shut-down feature is included that, when enabled, attenuates the output by 60 db. the device is packaged in an industry standard 16 pin tssop with exposed paddle for superb rf and thermal ground. the stq-2016-3z is pack- aged in a rohs compliant and green 16-pin tssop with matte tin finish. functional block diagram product features applications ? excellent carrier feedthrough, -40 dbm constant with output power ? +4.0 dbm output p1db ? wide baseband input, dc - 500 mhz ? superb phase accuracy and amplitude balance, 0.5 deg./0.2 db ? very low noise floor, -157 dbm/hz ? low acp, -65 dbc ? w-cdma transmitters product description 16 pin tssop with exposed ground pad package footprint: 0.197 x 0.252 inches, (5.0 x 6.4 mm) package height: 0.039 inches (1.0 mm) 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 bbqn rfp rfn bbin bbqp lop lon bbip lo quadrature generator vcc vee vee vcc sd vee vee vcc product specifications ? w-cdma modulation (see table 1 for test conditions) 869-894 mhz 1930-1990 mhz 2110-2170 mhz parameters comments unit min. typ. max. min. typ. max. min. typ. max. type* channel power guaranteed through output power test as specified on page 2 dbm -13 -11 -9 -14.5 -12.5 -10.5 -15 -13 -11 e power flatness range across fre- quency band db 0.25 0.5 0.25 0.5 0.25 0.5 c,d adjacent channel power guaranteed through im3 test as specified on page 2 dbc -65 -63 -65 -63 -65 -63 e first alternate channel power dbc -75 -68 -73 -68 -73 -68 c,d second alternate channel power dbc -75 -68 -73 -68 -73 -68 c,d broadband noise floor 60 mhz offset from carrier dbm/hz -157 -156 -157 -156 -156 -155 c,d signal-to-noise ratio noise offset: 60 mhz, measured in a 3.84 mhz bandwidth db 79 81 77 79 76 78 c,d *type definition: a = 100% tested (see table 2 for conditions), b = sample tested, c = characterized on samples over temperatur e and vcc, d = design parameter, e = 100% tested through corr elated cw parameter, i = device input specification. stq-2016-3 pb rohs compliant & packag e green stq-2016-3z 700-2500 mhz direct quadrature modulator
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 2 eds-104229 rev b stq-2016-3 direct quadrature modulator product specifications ? rf output, cw modulation (see table 2 for test conditions) 700-1000 mhz 1700-2500 mhz parameters additional test conditions/comments unit min. typ. max. min. typ. max. type* rf frequency range mhz 700 1000 1700 2500 a output power dbm -13 -10.5 -9.0 -13 -11.5 -9 a,c rf port return loss matched to 50 ? (refer to schematics on pages 14 and 15) db 20 16 d output p1db (i/q inputs = 3.74 vp-p differential typical) dbm +3.0 +4.0 0 +3.0 a,c carrier feedthrough dbm -40 -34 -40 -32 a,c sideband suppression db 34 40 34 40 a,c im3 suppression two-tone baseband input @ 1.2vp-p differ- ential per tone db 46 50 47 53 a,c quadrature phase error deg. -2 0.5 +2 -2 0.5 +2 d i/q amplitude balance db -0.2 0.05 +0.2 -0.2 0.05 +0.2 d supply voltage (vcc) v +4.75 +5 +5.25 +4.75 +5 +5.25 i supply current ma 60 73 86 60 73 86 a device thermal resistance junction-case oc/w 25 25 d product specifications ? parame ter variation, w-cdma modulation ( see table 1 for test conditions) vcc (v) temp. (deg. c) parameters comments unit 4.75 5.0 5.25 -40 +25 +85 type* channel power dbm -13.05 -13 -12.95 -12.15 -13 -13.50 c,d adjacent channel power dbc -64.3 -65 -65.4 -64.95 -65 -65.25 c,d first alternate channel power dbc -72.9 -73 -72.9 -75.1 -73 -72.9 c,d second alternate channel power dbc -73.25 -73 -72.9 -75.4 -73 -72.5 c,d broadband noise floor 60 mhz offset from carrier dbm/hz -156.3 -156 -155.95 -156.25 -156 -155.4 c,d signal-to-noise ratio noise offset: 60 mhz, measured in a 3.84 mhz bandwidth db 77.8 78 77.8 79 78 77 c,d *type definition: a = 100% tested (see tabl e 2 for conditions), b = sample tested, c = characterized on samples over temperatur e and vcc, d = design parameter, e = 100% tested through corr elated cw parameter, i = de vice input specification. product specifications ? parame ter variation, w- cdma modulation (see table 1 for test conditions) lo drive (dbm) i/q drive (vpp, diff.**) parameters comments unit -1 +3 +7 1.0 1.7 2.5 type* channel power dbm -13.05 -13 -12.95 -16.7 -13 -10.2 c,d adjacent channel power dbc -65.75 -65 -64.5 -68.7 -65 -58.6 c,d first alternate channel power dbc -72.3 -73 -73.1 -68.3 -73 -74.7 c,d second alternate channel power dbc -72.3 -73 -73.05 -67.3 -73 -73.7 c,d broadband noise floor 60 mhz offset from carrier dbm/hz -155.25 -156 -156.4 -156.7 -156 -155.2 c,d signal-to-noise ratio noise offset: 60 mhz, measured in a 3.84 mhz bandwidth db 77.5 78 78.3 75 78 80 c,d
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 3 eds-104229 rev b stq-2016-3 direct quadrature modulator 0 100 200 300 400 500 600 700 800 1.5 1 0.5 0 0.5 1 1.5 sa m p les i vp vpp v pp diff , 2vpp ? plot of single-ended w-cdma baseband signal (bbip) **peak-to-peak differential (vpp, diff.) baseband voltage definition: product specifications ? baseband modulation input parameters additional test conditions/comments unit min. typ. max. type* baseband frequency input -3db bandwidth, baseband inputs termi- nated in 50 ohms mhz dc 500 i baseband input resistance per pin kohms 4.4 d baseband input capacitance per pin pf 0.5 d product specifications ? shut-down input (pin 7) parameters additional test conditions/comments unit min. typ. max. type* shut-down current ma 42 60 a shut-down attenuation db 60 d shut-down pin resistance @ 1mhz kohm 11.9 d shut-down pin capacitance @ 1mhz pf 5.2 d shut-down control voltage thresholds shut-down disabled (normal operation) v 3.75 vcc i shut-down enabled v 0.0 1.5 i shut-down settling time ns <450 d *type definition: a = 100% tested (see table 2 for conditions), b = sample tested, c = characterized on samples over temperatur e and vcc, d = design parameter, e = 100 % tested through correlated cw parameter, i = device input specification. product specifications ? lo input parameters additional test conditions/comments unit min. typ. max. type* lo frequency mhz 700 2500 i lo drive level recommended/optimum levels dbm -1 +3 +7 i lo port return loss matched to 50 ? (see schematic on page 12) db 16 d
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 4 eds-104229 rev b stq-2016-3 direct quadrature modulator table 2. cw test conditions (for all product specifications unless otherwise noted) v cc (pins 2,10,15) +5v t a +25oc baseband input (pins 1, 8, 9, 16) 1.9v dc bias, 200khz fre- quency, 300 mvp-p per pin = 600 mvp-p differential drive, i and q signals in quadrature lo input (pins 4, 5) -5 dbm @ 1960 mhz table 1. w-cdma test conditions (unless otherwise noted) v cc (pins 2,10,15) +5v t a +25oc baseband input (pins 1, 8, 9, 16) 1.9v dc bias, w-cdma test model 1 w/ 64 dpch (par = 10.54), 850mvp-p per pin = 1.7 vp-p differential drive, i and q signals in quadrature lo input (pins 4, 5) +4.0 dbm @ 2140 mhz pin out description pin # function description additional comments 1 bbqp q-channel baseband input, positive terminal nominal dc bias voltage is 1.9v (biased internally) 2 vcc positive supply (+5v) 3 vee ground 4 lop local oscillator input, positive terminal nominal dc voltage is 2.0v. input should be ac-coupled. 5 lon local oscillator input, negative terminal nomina l dc voltage is 2.0v. input should be ac-coupled. 6 vee ground 7 sd shut-down control logic high = normal operation; logic low = shut-down enabled. 8 bbip i-channel baseband input, positive terminal nominal dc bias voltage is 1.9v (biased internally) 9 bbin i-channel baseband input, negative terminal nominal dc bias voltage is 1.9v (biased internally) 10 vcc positive supply (+5v) 11 vee ground 12 rfn rf output, negative terminal nominal dc voltage is 2.4v. output should be ac-coupled. 13 rfp rf output, positive terminal nominal dc volt age is 2.4v. output should be ac-coupled. 14 vee ground 15 vcc positive supply (+5v) 16 bbqn q-channel baseband input, negative terminal nomina l dc bias voltage is 1.9v (biased internally) absolute maximum ratings parameters value unit supply voltage (vcc) 6.0 v dc lo, rf input (lop, lon, rfp, rfn) +10 dbm baseband min input voltage (bbip, bbin, bbqp, bbqn) 0v dc baseband max input voltage (bbip, bbin, bbqp, bbqn) 3v dc operating temperature -40 to +85 oc storage temperature -65 to +150 oc operation of this device beyond any one of these limits may cause permanent damage. for reliab le continuous operation the device voltage and current must not exceed the maximum oper- ating values specified in the table on page one. part number ordering information part number reel size devices/reel min. max. stq-2016-3 7? 500 1000 stq-2016-3z 7? 500 1000 caution: esd sensitive appropriate precaution in handling, packaging and testing devices must be observed.
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 5 eds-104229 rev b stq-2016-3 direct quadrature modulator typical device performance graphs 6 4 20 2 4 6 8 158 156 154 152 150 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 vpp, diff. lo drive level (dbm) broadband noise floor (dbm/hz) 6 4 20 2 4 6 8 15 8 15 6 15 4 15 2 15 0 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo drive level (dbm) broadband noise floor (dbm/hz) 1 1.5 2 2.5 3 3.5 4 158 156 154 152 150 lo drive = -5 dbm lo drive = -2 dbm lo drive = -1 dbm lo drive = +4 dbm lo drive = +7 dbm iq drive level (vpp, diff.) broadband noise floor (dbm/hz) 4.7 4.8 4.9 5 5.1 5.2 158 157.5 157 156.5 156 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. vcc (vdc) broadband noise floor (dbm/hz) 1.4 1.5 1.6 1.7 1.8 1.9 158 157.5 157 156.5 156 vcc = 4.75 v vcc = 5.00 v vcc = 5.25 v iq drive level (vpp, diff.) broadband noise floor (dbm/hz) 50 0 50 100 158 157.5 157 156.5 156 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. temperature (deg. c) broadband noise floor (dbm/hz) 1.4 1.5 1.6 1.7 1.8 1.9 158 157.5 157 156.5 156 temp = -40 deg. c temp = +25 deg. c temp = +85 deg. c iq drive level (vpp , diff.) broadband noise floor (dbm/hz) baseband signal: w-cdma test model 1 w/ 64 dpch, peak-to-average ratio = 10.54 figure 5. broadband noise floor (60 mhz offset) vs. temperature, lo drive = +4.0 dbm @ 2140 mhz. figure 6. broadband noise floor (60 mhz offset) vs. i/q drive level, over temperature, lo drive = +4.0 dbm @ 2140 mhz. figure 3. broadband noise floor (60 mhz offset) vs. vcc, lo drive = +4.0 dbm @ 2140 mhz. figure 4. broadband noise floor (60 mhz offset) vs. i/q drive level, over vcc range, lo drive = +4.0 dbm @ 2140 mhz. figure 2. broadband noise floor (60 mhz offset) vs. i/q drive level, lo frequency = 2140 mhz. figure 1. broadband noise floor (60 mhz offset) vs. lo drive level, lo frequency = 2140 mhz. broadband noise floor
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 6 eds-104229 rev b stq-2016-3 direct quadrature modulator signal-to-noise ratio 6 4 20 2 4 6 8 13 5 13 7 13 9 14 1 14 3 14 5 14 7 14 9 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo drive level (dbm) signal-to-noise ratio (db) 1 1.5 2 2.5 3 3.5 4 13 5 13 7 13 9 14 1 14 3 14 5 14 7 14 9 lo drive = -5 dbm lo drive = -2 dbm lo drive = -1 dbm lo drive = +4 dbm lo drive = +7 dbm iq drive level (vpp, diff.) signal-to-noise ratio (db) figure 7. signal-to-noise ratio vs. lo drive level, lo frequency = 2140 mhz. figure 8. signal-to-noise ratio vs. i/q drive level, lo frequency = 2140 mhz. 4 .7 4 .8 4 .9 5 5 .1 5 .2 141 142 143 144 145 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. vcc (vdc) signal-to-noise ratio (db) 1.4 1.5 1.6 1.7 1.8 1.9 141 142 143 144 145 vcc = 4.75 v vcc = 5.00 v vcc = 5.25 v iq drive level (vpp, diff.) signal-to-noise ratio (db) figure 9. signal-to-noise ratio vs. vcc, lo drive = +4.0 dbm @ 2140 mhz. figure 10. signal-to-noise ratio vs. i/q drive level, over vcc range, lo drive = +4.0 dbm @ 2140 mhz. 50 250 255075100 141 142 143 144 145 146 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. temperature (deg. c) signal-to-noise ratio (db) 1.4 1.5 1.6 1.7 1.8 1.9 141 142 143 144 145 146 temp = -40 deg. c temp = +25 deg. c temp = +85 deg. c iq drive level (vpp, diff.) signal-to-noise ratio (db) figure 11. signal-to-noise ratio vs. temperature, lo drive = +4.0 dbm @ 2140 mhz. figure 12. signal-to-noise ratio vs. i/q drive level, over temperature, lo drive = +4.0 dbm @ 2140 mhz. typical device performance graphs baseband signal: w-cdma test model 1 w/ 64 dpch, peak-to-average ratio = 10.54
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 7 eds-104229 rev b stq-2016-3 direct quadrature modulator 6 4 20 2 4 6 8 158 156 154 152 150 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 vpp, diff. lo drive level (dbm) broadband noise floor (dbm/hz) 6 4 20 2 4 6 8 18 16 14 12 10 8 6 4 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo drive level (dbm) channel power (dbm) 11.522.533.54 18 16 14 12 10 8 6 4 lo drive = -5 dbm lo drive = -2 dbm lo drive = -1 dbm lo drive = +4 dbm lo drive = +7 dbm iq drive level (vpp, diff.) channel power (dbm) 21 00 21 20 2140 21 60 21 80 18 16 14 12 10 8 6 4 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo frequency (mhz) channel power (dbm) 11.522.533.54 18 16 14 12 10 8 6 4 lo freq. = 2110 mhz lo freq. = 2140 mhz lo freq. = 2170 mhz iq drive level (vpp, diff.) channel power (dbm) 4.7 4.8 4.9 5 5.1 5.2 15 14 13 12 11 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. vcc (vdc) channel power (dbm) 1.4 1.5 1.6 1.7 1.8 1.9 15 14 13 12 11 vcc = 4.75 v vcc = 5.00 v vcc = 5.25 v iq drive level (vpp, diff.) channel power (dbm) figure 13. channel power vs. lo drive level, lo frequency = 2140 mhz. figure 14. channel power vs. i/q drive level, lo frequency = 2140 mhz. figure 15. channel power vs. lo frequency, lo drive = +4.0 dbm. figure 16. channel power vs. i/q drive level, over lo frequency range,lo drive = +4.0 dbm. figure 17. channel power vs. vcc, lo drive = +4.0 dbm @ 2140 mhz. figure 18. channel power vs. i/q drive level, over vcc range, lo drive = +4.0 dbm @ 2140 mhz. channel power typical device performance graphs baseband signal: w-cdma test model 1 w/ 64 dpch, peak-to-average ratio = 10.54
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 8 eds-104229 rev b stq-2016-3 direct quadrature modulator 6 4 20 2 4 6 8 158 156 154 152 150 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 vpp, diff. lo drive level (dbm) broadband noise floor (dbm/hz) 50 25 0 25 50 75 100 15 14 13 12 11 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. temperature (deg. c) channel power (dbm) 1 1 .2 1 .4 1 .6 1 .8 2 16 15 14 13 12 11 10 temp. = -40 deg. c temp. = +25 deg. c temp. = +85 deg. c iq drive level (vpp, diff.) channel power (dbm) 6 4 20 2 4 6 8 70 65 60 55 50 45 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo drive level (dbm) adjacent channel power (dbc) 11.522.533.54 70 65 60 55 50 45 lo drive = -5 dbm lo drive = -2 dbm lo drive = -1 dbm lo drive = +4 dbm lo drive = +7 dbm iq drive level (vpp, diff.) adjacent ch annel power (dbc) 21 00 21 20 2140 21 60 21 80 70 65 60 55 50 45 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo frequency (mhz) adjacent channel power (dbc) 11.522.533.54 70 65 60 55 50 45 lo freq. = 2110 mhz lo freq. = 2140 mhz lo freq. = 2170 mhz iq drive level (vpp, diff.) adjacent channel power (dbc) figure 19. channel power vs. temperature, lo drive = +4.0 dbm @ 2140 mhz. figure 20. channel power vs. i/q drive level, over temperature range, lo drive = +4.0 dbm @ 2140 mhz. adjacent channel power figure 23. adjacent channel power vs. lo frequency, lo drive = +4.0 dbm. figure 24. adjacent channel power vs. i/q drive level, over lo frequency range, lo drive = +4.0 dbm. figure 21. adjacent channel power vs. lo drive level, lo frequency = 2140 mhz. figure 22. adjacent channel power vs. i/q drive level, lo frequency = 2140 mhz. typical device performance graphs baseband signal: w-cdma test model 1 w/ 64 dpch, peak-to-average ratio = 10.54
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 9 eds-104229 rev b stq-2016-3 direct quadrature modulator 6 4 20 2 4 6 8 158 156 154 152 150 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 vpp, diff. lo drive level (dbm) broadband noise floor (dbm/hz) 4.7 4.8 4.9 5 5.1 5.2 69 68 67 66 65 64 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. vcc (vdc) adjacent channel power (dbc) 1 .4 1 .5 1 .6 1 .7 1 .8 1 .9 69 68 67 66 65 64 vcc = 4.75 v vcc = 5.00 v vcc = 5.25 v iq drive level (vpp , diff.) adjacent channel power (dbc) 50 250 255075100 69 68 67 66 65 64 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. temperature (deg. c) adjacent channel power (dbc) 1.4 1.5 1.6 1.7 1.8 1.9 69 68 67 66 65 64 temp = -40 deg. c temp = +25 deg. c temp = +85 deg. c iq drive level (vpp , diff.) adjacent channel power (dbc) 6 4 20 2 4 6 8 80 75 70 65 60 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo drive level (dbm) first alternate channel power (dbc) 11.522.533.54 80 75 70 65 60 lo drive = -5 dbm lo drive = -2 dbm lo drive = -1 dbm lo drive = +4 dbm lo drive = +7 dbm iq drive level (vpp, diff.) first alternate channel power (dbc) figure 29. first alternate channel power vs. lo drive level, lo frequency = 2140 mhz. figure 30. first alternate channel power vs. i/q drive level, lo frequency = 2140 mhz. figure 27. adjacent channel power vs. temperature, lo drive = +4.0 dbm @ 2140 mhz. figure 28. adjacent channel power vs. i/q drive level, over temperature range, lo drive = +4.0 dbm @ 2140 mhz. figure 25. adjacent channel power vs. vcc, lo drive = +4.0 dbm @ 2140 mhz. figure 26. adjacent channel power vs. i/q drive level, over vcc range, lo drive = +4.0 dbm @ 2140 mhz. first alternate channel power typical device performance graphs baseband signal: w-cdma test model 1 w/ 64 dpch, peak-to-average ratio = 10.54
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 10 eds-104229 rev b stq-2016-3 direct quadrature modulator 6 4 20 2 4 6 8 158 156 154 152 150 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 vpp, diff. lo drive level (dbm) broadband noise floor (dbm/hz) 21 00 21 20 2140 21 60 21 80 80 75 70 65 60 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo frequency (mhz) first alternate channel power (dbc) 1 1 .5 2 2 .5 3 3 .5 4 80 75 70 65 60 lo freq. = 2110 mhz lo freq. = 2140 mhz lo freq. = 2170 mhz iq dr ive level (vpp , diff.) first alternate channel power (dbc) 4.7 4.8 4.9 5 5.1 5.2 80 78 76 74 72 70 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. vcc (vdc) first alternate channel power (dbc) 1.4 1.5 1.6 1.7 1.8 1.9 80 78 76 74 72 70 vcc = 4.75 v vcc = 5.00 v vcc = 5.25 v iq drive level (vpp , diff.) first alternate channel power (dbc) 50 250 255075100 80 78 76 74 72 70 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. temperature (deg. c) first alternate channel power (dbc) 1.4 1.5 1.6 1.7 1.8 1.9 80 78 76 74 72 70 temp = -40 deg. c temp = +25 deg. c temp = +85 deg. c iq drive level (vpp, diff.) first alternate channel power (dbc) figure 35. first alternate channel power vs. temperature, lo drive = +4.0 dbm @ 2140 mhz. figure 36. first alternate channel power vs. i/q drive level, over temperature range, lo drive = +4.0 dbm @ 2140 mhz. figure 33. first alternate channel power vs. vcc, lo drive = +4.0 dbm @ 2140 mhz. figure 34. first alternate channel power vs. i/q drive level, over vcc range, lo drive = +4.0 dbm @ 2140 mhz. figure 31. first alternate channel power vs. lo frequency, lo drive = +4.0 dbm. figure 32. first alternate channel power vs. i/q drive level, lo drive = +4.0 dbm. typical device performance graphs baseband signal: w-cdma test model 1 w/ 64 dpch, peak-to-average ratio = 10.54
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 11 eds-104229 rev b stq-2016-3 direct quadrature modulator 11.522.533.54 85 80 75 70 65 60 lo drive = -5 dbm lo drive = -2 dbm lo drive = -1 dbm lo drive = +4 dbm lo drive = +7 dbm iq drive level (vpp, diff.) second alternate channel power (dbc) 21 00 21 20 2140 21 60 21 80 85 80 75 70 65 60 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo frequency (mhz) second alternate channel power (dbc) 11.522.533.54 85 80 75 70 65 60 lo freq. = 2110 mhz lo freq. = 2140 mhz lo freq. = 2170 mhz iq drive level (vpp, diff.) second alternate channel power (dbc) 4.7 4.8 4.9 5 5.1 5.2 80 78 76 74 72 70 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. vcc (vdc) second alternate channel power (dbc) 1.4 1.5 1.6 1.7 1.8 1.9 80 78 76 74 72 70 vcc = 4.75 v vcc = 5.00 v vcc = 5.25 v iq drive level (vpp , diff.) second alternate channel power (dbc) figure 41. second alternate channel power vs. vcc, lo drive = +4.0 dbm @ 2140 mhz. figure 42. second alternate channel power vs. i/q drive level, over vcc range, lo drive = +4.0 dbm @ 2140 mhz. figure 39. second alternate channel power vs. lo frequency, lo drive = +4.0 dbm. figure 40. second alternate channel power vs. i/q drive level, lo drive = +4.0 dbm. figure 37. second alternate channel power vs. lo drive level, lo frequency = 2140 mhz. figure 38. second alternate channel power vs. i/q drive level, lo frequency = 2140 mhz. 6 4 20 2 4 6 8 85 80 75 70 65 60 i/q drive = 1 vpp, diff. i/q drive = 2 vpp, diff. i/q drive = 3 vpp, diff. i/q drive = 4 v pp , diff. lo drive level (d bm) second alternate channel power (dbc) second alternate channel power typical device performance graphs baseband signal: w-cdma test model 1 w/ 64 dpch, peak-to-average ratio = 10.54
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 12 eds-104229 rev b stq-2016-3 direct quadrature modulator 50 250 255075100 80 78 76 74 72 70 i/q drive = 1.5 vpp, diff. i/q drive = 1.7 vpp, diff. i/q drive = 1.9 vpp, diff. temperature (deg. c) second alternate channel power (dbc) 1.4 1.5 1.6 1.7 1.8 1.9 80 78 76 74 72 70 temp = -40 deg. c temp = +25 deg. c temp = +85 deg. c iq drive level (vpp , diff.) second alternate channel power (dbc) figure 43. second alternate channel power vs. temperature, lo drive = +4.0 dbm @ 2140 mhz. figure 44. second alternate channel power vs. i/q drive level, over temperature range, lo drive = +4.0 dbm @ 2140 mhz. 16 15 14 13 12 11 10 0 2 4 6 8 10 12 14 channel p ower ( dbm ) percentage of total units (%) mean = -12.87 std. dev. = 0.43 75 70 65 60 55 0 2 4 6 8 10 ad j acent channel power ( dbc ) percentage of total units (%) mean = -66.33 std. dev. = 1.737 80 78 76 74 72 70 0 5 10 15 20 25 first altern ate c han nel power ( dbc ) percentage of total units (%) mean = -74.6 std. dev. = 1.28 80 78 76 74 72 70 0 5 10 15 20 25 30 35 secon d alternate ch ann el p ower ( dbc ) percentage of total units (%) mean = -74.70 std. dev. = 1.23 figure 45. channel power distribution, 4 production lots, 120 units. lo drive = +4.0 dbm @ 2140 mhz. i/q drive level = 1.7 vpp, diff. figure 46. adjacent channel power distribution, 4 production lots, 120 units. lo drive = +4.0 dbm @ 2140 mhz. i/q drive level = 1.7 vpp, diff. figure 47. first alternate channel power distribution, 4 production lots, 120 units. lo drive = +4.0 dbm @ 2140 mhz. i/q drive level = 1.7 vpp, diff. figure 48. second alternate channel power distribution, 4 production lots, 120 units. lo drive = +4.0 dbm @ 2140 mhz. i/q drive level = 1.7 vpp, diff. typical device performance graphs baseband signal: w-cdma test model 1 w/ 64 dpch, peak-to-average ratio = 10.54 typical performance distribution over multiple lots
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 13 eds-104229 rev b stq-2016-3 direct quadrature modulator notes: 1. package body sizes exclude mold flash protrusions or gate burrs. 2. tolerance .004" (0.1mm) unless otherwise specified. 3. coplanarity: .004" (0.1mm) 4. controlling dimension is millimeter, converted inch dimensions are not necessarily exact. 5. followed from jedec mo-153. 0 8 lot # stq 2016 xzzzz part # dimensions in inches (mm) (z) package dimensions (?16? package) 0.118 (3.0) 0.118 (3.0) 0.049 (1.25) 0.272 (6.9) 0.035 (0.9) 0.010 (0.25) via - indicates metalization - vias connect pad to underlying ground plane all units are in inches (mm) 0.012 (0.30) 0.014 (0.35) 0.024 (0.63) 0.028 (0.7) suggested pcb pad layout 160 159 158 157 156 155 154 0 5 10 15 20 broadband noise floor ( dbm/h z ) percentage of total units (%) mean = -156.65 std. dev. = 0.43 14014114214314414514614714 8 0 2 4 6 8 10 12 si g nal-to-noise ratio ( db ) percentage of total units (%) mean = 143.78 std. dev. = 0.52 figure 49. broadband noise floor (60 mhz offset) distribution, 4 production lots, 120 units. lo drive = +4.0 dbm @ 2140 mhz. i/q drive level = 1.7 vpp, diff. figure 50. signal-to-noise ratio (60 mhz offset) distribution, 4 production lots, 120 units. lo drive = +4.0 dbm @ 2140 mhz. i/q drive level = 1.7 vpp, diff.
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 14 eds-104229 rev b stq-2016-3 direct quadrature modulator 700 ? 1000 mhz application schematic bill of materials (for 700 ? 1000 mhz evaluation board p/n stq-2016-3evb-1) component designator value qty vendor part number description u1 1 smdi stq-2016 sige direct quadrature modulator p8, p9, p10, p11, p12, p13 6 johnson components 142-0701-851 sma connector, end launch with tab, for .062? thick board h1, h2 2 amp 640453-2 2-pin header, right angle t3, t4 1:1 2 panasonic ehf-fd1618 rf transformer, 700-1300mhz l1 1uh 1 panasonic elj-fa1r0kf2 inductor, 1210 footprint, 10% tolerance r1, r7, r9, r10 200 ohm 4 venkel cr1206-8w-2000t resistor, 1206 footprint, 1% tolerance r8 1 kohm 1 venkel cr0603-16w-1001ft resis tor, 0603 footprint, 1% tolerance c6, c18 33pf 2 venkel c0603cog500-330jne capacitor, 0603 footprint, cog dielectric, 5% tolerance c9, c17 1nf 2 venkel c0603cog500-102jne capacitor, 0603 footprint, cog dielectric, 5% tolerance c3 2.2uf 1 venkel c1206y5v160-225zne capacitor, 1206 footprint, y5v dielectric, 16v rating c4, c5, c10, c16 10pf 4 venkel c0603cog500-100jne capacitor, 0603 f ootprint, cog dielectric, 5% tolerance sh1 1 3m 929950-00 shunt for 2-pin header stq-2016 h2 r8 r9 r10 p12 p13 bbip bbin 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 bbqp bbqn r1 r7 p8 p9 vcc vcc c6 c9 c10 c1 6 c18 vcc c17 c4 c5 vcc 1 8 4 5 t3 p10 loin p11 rfout t4 1 4 8 5 vcc vcc h2 c3 l1 1 2 rfp rfn lop lon sd u1 vee vee vcc vcc vee vee vcc 1 2 sh1 connect backside exposed paddle to rf/dc ground. bbip bbin bbqp bbqn s hut-down 2.0" (50.8mm) 1 2 h1 h2 p8 p9 p1 0 p11 p12 p13 c3 l1 u1 r1 r9 r10 r7 r8 c9 c6 c18 c4 c5 c10 c16 c17 sh1 1 2 2.0" (50.8mm) t3 t4 bbqp bbqn bbip bbin shutdown gnd lo in rf out vcc fully assembled pcb note: remove sh1 to enable modulated output.
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 15 eds-104229 rev b stq-2016-3 direct quadrature modulator 1.7 ? 2.5 ghz application schematic stq-2016 h2 r8 r9 r1 0 p12 p13 bbip bbin 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 bbqp bbqn r1 r7 p8 p9 vcc vcc c6 c9 c10 c16 c18 vcc c17 c4 c5 vcc 1 8 4 5 t3 p10 loin p11 rfout t4 1 4 8 5 vcc vcc h2 c3 l1 1 2 rfp rfn lop lon sd u1 vee vee vcc vcc vee vee vcc c2 c1 1 2 sh1 connect backside exposed paddle to rf/dc ground. bbip bbin bbqp bbqn shut-down 2.0" (50.8mm) 1 2 h1 h2 p8 p9 p10 p11 p12 p13 c3 l1 u1 r1 r9 r10 r7 r8 c9 c6 c18 c4 c5 c10 c16 c17 sh1 1 2 2.0" (50.8mm) c1 t3 t4 c2 bbqp bbqn bbip bbin shutdown gnd lo in rf out vcc fully assembled pcb note: remove sh1 to enable modulated output. bill of materials (for 1.7 ? 2.5 ghz evaluation board p/n stq-2016-3evb-2) component designator value qty vendor part number description u1 1 smdi stq-2016 sige direct quadrature modulator p8, p9, p10, p11, p12, p13 6 johnson components 142-0701-851 sma connector, end launch with tab, for .062? thick board h1, h2 2 amp 640453-2 2-pin header, right angle t3, t4 1:1 2 panasonic ehf-fd1619 rf transformer, 1200-2200mhz l1 1uh 1 panasonic elj-fa1r0kf2 inductor, 1210 footprint, 10% tolerance r1, r7, r9, r10 200 ohm 4 venkel cr1206-8w-2000t resistor, 1206 footprint, 1% tolerance r8 1 kohm 1 venkel cr0603-16w-1001ft resis tor, 0603 footprint, 1% tolerance c1, c2 0.5pf 2 venkel c0603cog500-0r5cne capacitor, 0603 footprint 0.25pf tolerance c6, c18 6.8pf 2 venkel c0603cog500-6r8cne capacitor, 0603 footprint, cog dielectric, 0.25pf tol. c9, c17 1nf 2 venkel c0603cog500-102jne capacitor, 0603 footprint, cog dielectric, 5% tolerance c3 2.2uf 1 venkel c1206y5v160-225zne capacitor, 1206 footprint, y5v dielectric, 16v rating c4, c5, c10, c16 2.2pf 4 venkel c0603cog500-2r2cne capacitor, 0603 footprint, cog dielectric, 0.25pf toler- ance sh1 1 3m 929950-00 shunt for 2-pin header
303 s. technology court, broomfield, co 80021 phone: (800) smi-mmic http://www.sirenza.com 16 eds-104229 rev b stq-2016-3 direct quadrature modulator agilent e4437b signal generator band-pass filte r bw = 90 mhz fc = 2080 mh z k&l tf327-1 ampl i fier +28 db gain mi ni - ci r cui t s zh l - 1042 j rhode & schwarz amiq i/q modulatio n generator sirenza stq-2016-3 ii q q low-pass filters fc = 1.9 mhz mi ni - ci rcuit s slp - 1. 9 ii q q l o rfout rhode & schwarz fsiq7 spectrum analyzer band-pass fil te r bw = 35 mhz fc = 2140 mhz noi se test onl y noi se test onl y telonic 150 0 - 5 - 5e e figure 51. measurement system for modulation performance tests: channel power, adjacent channel power, first alternate channel power, second alternate channel power, and broadband noise floor. lo match 0 90 0 90 lo- bbq+ bbi- lo+ rf match + vocm - vcc 50 50 2k 2k 499 499 -4dbm lo rf+ rf- rf out 50 5.11k 5.11k 10k 24.9 bbi bbq + vocm - vcc 50 50 2k 2k 499 499 50 5.11k 5.11k 10k 24.9 1k 1k vcc vcc stq-x016 dc levels for bbin, bbip, bbqn, bbqp are 1.9v nominal. the offset required to null carrier feedthrough is typically <20mv. 600mv p-p differential 600mv p-p differential +5v 200khz sine 145mv amplitude 0 degree phase 200khz sine 145mv amplitude +90 degree phase - for intermodulation tests, synthesizer set for 200khz and 220khz sine outputs on i and q channels bbi+ bbq- ad8138 ad8138 figure 52. measurement system for continuous wave performance tests: output power, p1db, carrier feedthrough, sideband suppresion, and im3 suppression.

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